onsemi FGH60N60SMD-F085
This Device is Pb−Free and is RoHS Compliant • Qualified to Automotive Requirements of AEC−Q101 Applications • Automotive Chargers, Converters, High Voltage Auxiliaries • Solar Inverters, UPS, SMPS, PFC VCES 600 V IC 60 A C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH60N60 SMD © Semiconductor Components Industries, LLC, 2013 January, 2020 − Rev. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.| Part No. | FGH60N60SMD-F085 |
|---|---|
| Datasheet | FGH60N60SMD-F085 Download |
| Manufacturer |  onsemi |
| Description | IGBT |
| Buy | Stock & Price |
DESCRIPTION
Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential.FEATURES
● Maximum Junction Temperature: TJ = 175°C● Positive Temperature Co−efficient for easy Parallel Operating
● High Current Capability
● Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A
● High Input Impedance
● Tightened Parameter Distribution
● 4 $Y &Z &3 &K FGH60N60SMD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FGH60N60SMD−F085/D FGH60N60SMD−F085
ABSOLUTE MAXIMUM RATINGS
SymbolDESCRIPTION
Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ±20 V IC Collector Current TC = 25°C 120 A TC = 100°C...
