FGH75T65SQDNL4 Datasheet PDF

FEATURES

● Extremely Efficient Trench with Field Stop Technology
● TJmax = 175°C
● Improved Gate Control Lowers Switching Losses
● Separate Emitter Drive Pin
● TO−247−4L for Minimal Eon Losses
● Optimized for High Speed Switching
● 100% of the Parts Tested for ILM
● These are Pb−Free Devices Typical

APPLICATIONS

● Solar Inverter
● Uninterruptible Power Inverter Supplies (UPS)
● Neutral Point Clamp Topology

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 650 V IC A 150 75 Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 150 75 Diode Pulsed Current TPULSE Limited by TJ Max IFM 300 A Pulsed collector current, Tpulse limited by TJmax ICM 300 A ILM Gate−emitter voltage Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) VGE $20 V $30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD W 375 188 Operating junction temperature range Storage temperature range Lead temperature for soldering, 1/8″ from case for 5 seconds TJ Tstg TSLD −55 to +175 °C −55 to +175 °C 260 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.