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FGH75T65SQDT Datasheet PDF

onsemi FGH75T65SQDT

This Device is Pb−Free and is RoHS Compliant Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC VCES 650 V IC 75 A C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FGH75T65 SQDT © Semiconductor Components Industries, LLC, 2017 November, 2019 − Rev. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
Part No. FGH75T65SQDT
Datasheet FGH75T65SQDT Download
Manufacturer
onsemi
Description IGBT
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FGH75T65SQDT datasheet page 1 preview

DESCRIPTION

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

FEATURES

● Max Junction Temperature TJ = 175°C
● Positive Temperature Co−efficient for Easy Parallel Operating
● High Current Capability
● Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 75 A
● 100% of the Parts Tested for ILM
● High Input Impedance
● Fast Switching
● Tighten Parameter Distribution
● 3 $Y &Z &3 &K FGH75T65SQDT = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FGH75T65SQDT/D FGH75T65SQDT

ABSOLUTE MAXIMUM RATINGS

Symbol

DESCRIPTION

FGH50T65SQD−F155 Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient...
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