onsemi FGH80N60FD
This Device is Pb−Free and is RoHS Compliant Applications • Induction Heating, PFC, Telecom, ESS C G E EC G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH80N60 FD $Y &Z &3 &K FGH80N60FD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.| Part No. | FGH80N60FD |
|---|---|
| Datasheet | FGH80N60FD Download |
| Manufacturer |  onsemi |
| Description | IGBT |
| Buy | Stock & Price |
DESCRIPTION
Using Novel Field Stop IGBT Technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.FEATURES
● High Current Capability● Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
● High Input Impedance
● Fast Switching
● © Semiconductor Components Industries, LLC, 2007 February, 2020 − Rev. 3 1 Publication Order Number: FGH80N60FD/D FGH80N60FD
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Symbol Ratings Unit Collector to Emitter Voltage Gate to Emitter Voltage Collector Current TC = 25°C TC = 100°C VCES VGES IC 600 V ±20 V 80 A 40 A Pulsed Collector Current Maximum Power Dissipation TC = 25°C TC = 25°C TC = 100°C ICM (Note 1) 160 A PD 290 W 116 W Operating Junction Temperature TJ −55 to +150 °C Storage Temperature Range Tstg −55 to +150 °C Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.
