onsemi FGHL50T65MQD
IGBT
| Part No. | FGHL50T65MQD |
|---|---|
| Datasheet | FGHL50T65MQD Download |
| Manufacturer |  onsemi |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum Junction Temperature: TJ = 175°C● Positive Temperature Co−efficient for Easy Parallel Operating
● High Current Capability
● Low Saturation Voltage: VCE(sat) = 1.45 V (Typ.) @ IC = 50 A
● 100% of the Parts are Tested for ILM (Note 2)
● Smooth & Optimized Switching
● Tight Parameter Distribution
● RoHS Compliant Typical
APPLICATIONS
● Solar Inverter● UPS, ESS
● PFC, Converters
MAXIMUM RATINGS
Parameter Symbol Value Unit Collector−to−Emitter Voltage VCES 650 V Gate−to−Emitter Voltage VGES ±20 V Transient Gate−to−Emitter Voltage VGES ±30 V Collector Current (Note 1) TC = 25°C IC 80 A TC = 100°C 50 Pulsed Collector Current (Note 2) ILM 200 A Pulsed Collector Current (Note 3) ICM 200 A Diode Forward Current (Note 1) TC = 25°C IF 55 A TC = 65°C 40 Pulsed Diode Maximum Forward Current IFM 200 A Non−Repetitive Forward Surge Current (Half−Sine Pulse, tp = 8.3 ms, TC = 25°C) (Half−Sine Pulse, tp = 8.3 ms, TC = 150°C) IF,SM A 135 120 Maximum Power Dissipation TC = 25°C PD 268...
