FGHL50T65MQDTL4 Datasheet PDF

FEATURES

● Maximum Junction Temperature: TJ = 175°C
● Positive Temperature Co−efficient for Easy Parallel Operating
● High Current Capability
● Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 50 A
● 100% of the Parts are Tested for ILM (Note 2)
● Smooth and Optimized Switching
● Tight Parameter Distribution
● RoHS Compliant Typical

APPLICATIONS

● Solar Inverter
● UPS, ESS
● PFC, Converters

MAXIMUM RATINGS

Parameter Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 650 V VGES ±20 V ±30 Collector Current (Note 1) @ TC = 25°C @ TC = 100°C IC 80 A 50 Pulsed Collector Current (Note 2) ILM 200 A Pulsed Collector Current (Note 3) ICM 200 A Diode Forward Current (Note 1) @ TC = 25°C IF 60 A @ TC = 100°C 50 Pulsed Diode Maximum Forward Current IFM 200 A Maximum Power Dissipation @ TC = 25°C @ TC = 100°C PD 268 W 134 Operating Junction and Storage Temperature Range TJ, −55 to °C TSTG +175 Maximum Lead Temp. for Soldering Purposes (1/8″ from case for 5 s) TL 260 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.