onsemi FGY160T65SPD-F085
IGBT
APPLICATIONS
● Rugged Transient Reliability● Outstanding Parallel Operation Performance with Balance Current Sharing
● Low EMI
FEATURES
● AEC−Q101 Qualified and PPAP Capable● Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A
● Maximum Junction Temperature: TJ = 175°C
● Positive Temperature Co−Efficient
● Tight Parameter Distribution
● High Input Impedance
● 100% of the Parts are Dynamically Tested
● Short circuit ruggedness > 6 ms @ 25°C
● Copacked with Soft, Fast Recovery Extremefast Diode
● This Device is Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● Traction Inverter for HEV/EV● Auxiliary DC/AC Converter
● Motor Drives
● Other Power−Train
APPLICATIONS
Requiring High Power Switch C G E G CE TO−247−3LD CASE 340CU MARKING DIAGRAM $Y&Z&3&K FGY160T 65SPD © Semiconductor Components Industries, LLC, 2017 November, 2019 − Rev. 3 &Y &Z &3 &K FGY160T65SPD = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.