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FGY75T95LQDT Datasheet PDF

onsemi FGY75T95LQDT

IGBT

Part No. FGY75T95LQDT
Datasheet FGY75T95LQDT Download
Manufacturer
onsemi
Description IGBT
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FGY75T95LQDT datasheet page 1 preview

FEATURES

● Maximum Junction Temperature : TJ = 175℃
● Positive Temperature Co−efficient for Easy Parallel Operating
● High Current Capability
● Low Saturation Voltage: VCE(Sat) = 1.31 V (Typ.) @ IC = 75 A
● Fast Switching
● Tighten Parameter Distribution
● These Devices are Pb−Free and are RoHS Compliant

APPLICATIONS

● Solar Inverter

MAXIMUM RATINGS

Rating Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES VGES 950 V ±20 V ±30 Collector Current @TC = 25°C IC @TC = 100°C 150 A 75 Pulsed Collector Current (Note 1) ILM 225 A Pulsed Collector Current (Note 2) ICM Diode Forward Current @TC = 25°C IF @TC = 100°C 225 A 150 A 75 Pulsed Diode Forward Current (Note 2) IFM 225 A Maximum Power Dissipation @TC = 25°C PD @TC = 100°C 453 W 226 Operating Junction / Storage Temperature Range TJ, TSTG −55 to +175 °C Maximum Lead Temp. for Soldering TL Purposes, 1/8” from case for 5 seconds 300 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.
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