onsemi FQB27N25TM-F085
N-Channel MOSFET
FEATURES
D Typ RDS(on) = 108mΩ at VGS = 10V, ID = 25.5A N Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A IG UIS Capability S RoHS Compliant E Qualified to AEC Q101 D DAPPLICATIONS
E W Automotive Engine Control NE Powertrain Management U R Solenoid and Motor Drivers O i Electronic Steering F m N Integrated Starter/Alternator IND se IO Distributed Power Architectures and VRM DE on AT Primary Switch for 12V Systems GS TO-263AB G T N R M MOSFETMAXIMUM RATINGS
TJ = 25°C unless otherwise noted NMME YOU FOR Symbol Parameter O T IN VDSS O C C VGS C T RE NTA FOR ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current O O E EAS Single Pulse Avalanche Energy N C IV Power Dissipation ISIS E T PD Derate above 25oC S TA TJ, TSTG Operating and Storage Temperature E A N RθJC Thermal Resistance, Junction to Case DVIC PLE SE RθJA Maximum Thermal Resistance, Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) D TO-262A...