onsemi HGTG18N120BN
HGTG18N120BN is based on Non− Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.| Part No. | HGTG18N120BN |
|---|---|
| Datasheet | HGTG18N120BN Download |
| Manufacturer |  onsemi |
| Description | NPN IGBT |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● 26 A, 1200 V, TC = 110°C● Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
● Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C
● Short Circuit Rating
● Low Conduction Loss
● This Device is Pb−Free C G E E C G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K G18N120BN © Semiconductor Components Industries, LLC, 2001 February, 2020 − Rev. 3 $Y &Z &3 &K G18N120BN = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: HGTG18N120BN/D HGTG18N120BN
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) SymbolDESCRIPTION
Ratings Unit BVCES Collector to Emitter Voltage 1200 V IC Collector Current Continuous TC = 25°C 54 A TC = 110°C 26 A ICM Collector Current Pulsed (Note 1) TC = 25°C 160 A VGES Gate to Emitter Voltage Continuous ±20 V VGEM Gate to Emitter Voltage Pulsed ±30 V SS...
