onsemi HGTG7N60A4
The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.| Part No. | HGTG7N60A4 |
|---|---|
| Datasheet | HGTG7N60A4 Download |
| Manufacturer |  onsemi |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● >100kHz Operation at 390V, 7A● 200kHz Operation at 390V, 5A
● 600V Switching SOA Capability
● Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at TJ = 125oC
● Low Conduction Loss Ordering Information PART NUMBER PACKAGE BRAND HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4 TO-263AB TO-247 TO-220AB G7N60A4 G7N60A4 G7N60A4 NOTE: When ordering, use the entire part number. Symbol C G Packaging JEDEC STYLE TO-247 E C G COLLECTOR (BOTTOM SIDE METAL) E JEDEC TO-220AB E C G COLLECTOR (FLANGE) JEDEC TO-263AB COLLECTOR G (FLANGE) E ©2004 Semiconductor Components Industries, LLC. November-2017, Rev. 2 Publication Order Number: HGTP7N60A4/D HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
