onsemi HUFA76407DK8T-F085
This advanced process Ultra-Low On-Resistance rDS(on) = 0.090 at VGS = 10 V Ultra-Low On-Resistance rDS(on) = 0.105 at VGS = 5 V technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is Peak Current vs Pulse Width Curve capable of withstanding high energy UIS Rating Curve in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.| Part No. | HUFA76407DK8T-F085 |
|---|---|
| Datasheet | HUFA76407DK8T-F085 Download |
| Manufacturer |  onsemi |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
GENERAL DESCRIPTION
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process● Ultra-Low On-Resistance rDS(on) = 0.090 at VGS = 10 V
● Ultra-Low On-Resistance rDS(on) = 0.105 at VGS = 5 V technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is
● Peak Current vs Pulse Width Curve capable of withstanding high energy
● UIS Rating Curve in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in
● Transient Thermal Impedance Curve vs Board Mounting Area applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay
● Switching Time vs RGS Curves drivers, low-voltage bus switches, and power management in portable and battery-operated products.
● Qualified to AEC Q101
● RoHS Compliant MOSFET
MAXIMUM RATINGS
TA = 25 °C unless otherwise noted Sy...
