onsemi ISL9V3036S3ST-F085C
N-Channel IGBT
| Part No. | ISL9V3036S3ST-F085C |
|---|---|
| Datasheet | ISL9V3036S3ST-F085C Download |
| Manufacturer |  onsemi |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● SCIS Energy = 300 mJ at TJ = 25°C● Logic Level Gate Drive
● AEC−Q101 Qualified and PPAP Capable
● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● Automotive Ignition Coil Driver Circuits● High Current Ignition System
● Coil on Plug
APPLICATIONS
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Collector to Emitter Breakdown Voltage BVCER 360 V (IC = 1 mA) Emitter to Collector Voltage − Reverse BVECS 24 V Battery Condition (IC = 10 mA) ISCIS = 14.2 A, L = 3.0 mHy, RGE = 1 kW, TC = 25°C (Note 1) ESCIS25 300 mJ ISCIS = 10.6 A, L = 3.0 mHy, RGE = 1 kW, TC = 150°C (Note 2) ESCIS150 170 mJ Collector Current Continuous, at VGE = 4.0 V, TC = 25°C Collector Current Continuous, at VGE = 4.0 V, TC = 110°C Gate to Emitter Voltage Continuous Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C Operating Junction and Storage Temperature IC25 IC110 VGEM PD PD TJ, TSTG 21 17 ±10 150 1.10 −40 to 175 A A V W W/°C °C Lead Temp...
