onsemi ISL9V3040D3STV
N-Channel IGBT
| Part No. | ISL9V3040D3STV |
|---|---|
| Datasheet | ISL9V3040D3STV Download |
| Manufacturer |  onsemi |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● SCIS Energy = 300 mJ at TJ = 25°C● Logic Level Gate Drive
● This Device is Pb−Free and is RoHS Compliant
● AEC−Q101 Qualified and PPAP Capable
APPLICATIONS
● Automotive Ignition Coil Driver Circuits● High Current Ignition System
● Coil on Plug
APPLICATIONS
MAXIMUM RATINGS
(TJ = 25°C Unless Otherwise Stated) Parameter Symbol Value Units Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) ISCIS = 14.2 A, L = 3.0 mHz, RGE = 1 KW (Note 1), TC = 25°C ISCIS = 10.6 A, L = 3.0 mHz, RGE = 1 KW (Note 2), TC = 150°C Collector Current Continuous, at VGE = 4.0 V, TC = 25°C Collector Current Continuous, at VGE = 4.0 V, TC = 110°C Gate to Emitter Voltage Continuous Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C Operating Junction and Storage Temperature BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD PD TJ, TSTG 400 24 300 170 21 17 ±10 150 1 −55 to 175 V V mJ mJ A A V W W/°C °C Lead Temperatur...
