onsemi ISL9V3040S3ST-F085C
N-Channel IGBT
| Part No. | ISL9V3040S3ST-F085C |
|---|---|
| Datasheet | ISL9V3040S3ST-F085C Download |
| Manufacturer |  onsemi |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● SCIS Energy = 300 mJ at TJ = 25°C● Logic Level Gate Drive
● AEC−Q101 Qualified and PPAP Capable
● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● Automotive Ignition Coil Driver Circuits● High Current Ignition System
● Coil on Plug Application
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 400 V BVECS Emitter to Collector Voltage − Reverse 24 V Battery Condition (IC = 10 mA) ESCIS25 ISCIS = 14.2 A, L = 3.0 mHy, RGE = 1 KW, TC = 25°C (Note 1) ESCIS150 ISCIS = 10.6 A, L = 3.0 mHy, RGE = 1 KW, TC = 150°C (Note 2) IC25 Collector Current Continuous at VGE = 4.0 V, TC = 25°C IC110 Collector Current Continuous at VGE = 4.0 V, TC = 110°C VGEM Gate to Emitter Voltage Continuous 300 mJ 170 mJ 21 A 17 A ±10 V PD Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C TJ, TSTG Operating Junction and Storage Temperature 150 1 −55 to +175 W W/°C °C TL Lead Temperatur...
