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ISL9V5045S3ST-F085 Datasheet PDF

onsemi ISL9V5045S3ST-F085

The ISL9V5045S3ST-F085 is next generation ignition IGBT that offer outstanding SCIS capability in the industry standard D2-Pak (TO-263) plastic package. This device is intended for use in automotive ignition circuits, specifically as a coil drivers.
Part No. ISL9V5045S3ST-F085
Datasheet ISL9V5045S3ST-F085 Download
Manufacturer
onsemi
Description N-Channel IGBT
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ISL9V5045S3ST-F085 datasheet page 1 preview

FEATURES

„ SCIS Energy = 500mJ at TJ = 25oC „ Logic Level Gate Drive „ Qualified to AEC Q101 „ RoHS Compliant

APPLICATIONS

„ Automotive Ignition Coil Driver Circuits „ Coil - On Plug

APPLICATIONS

GENERAL DESCRIPTION

Internal diodes provide voltage clamping without the need for external components. Package GATE EMITTER COLLECTOR (FLANGE) JEDEC TO-263AB D2-Pak ©2012 Semiconductor Components Industries, LLC. September-2017, Rev. 1 Symbol GATE R1 R2 COLLECTOR EMITTER Publication Order Number: ISL9V5045S3ST-F085/D ISL9V5045S3ST-F085 N-Channel Ignition IGBT Device

MAXIMUM RATINGS

TA = 25°C unless otherwise noted Symbol BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ TSTG TL Tpkg ESD Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) At Starting TJ = 25°C, ISCIS = 39.2A, L = 650 µHy At Starting TJ = 150°C, ISCIS = 31.1A, L = 650 µHy Collector Current Continuous, At TC = 25°C, See Fig 9 Collector Current Continu...
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