onsemi MJE803G
Plastic Darlington Complementary Silicon Power Transistors
| Part No. | MJE803G |
|---|---|
| Datasheet | MJE803G Download |
| Manufacturer |  onsemi |
| Description | Plastic Darlington Complementary Silicon Power Transistors |
| Buy | Stock & Price |
FEATURES
● High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc● Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication
● Choice of Packages − MJE700 and MJE800 Series
● These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit Collector−Emitter Voltage MJE700G, MJE800G MJE702G, MJE703G, MJE802G, MJE803G VCEO 60 80 Vdc Collector−Base Voltage MJE700G, MJE800G MJE702G, MJE703G, MJE802G, MJE803G VCB Vdc 60 80 Emitter−Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VEB 5.0 Vdc IC 4.0 Adc IB 0.1 Adc PD 40 W 0.32 mW/_C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 _C Stresses exceed
