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NCD57080A Datasheet PDF

onsemi NCD57080A

The under voltage lockout (UVLO) circuit enables the device to operate at power on when a typical supply voltage higher than VUVLO1−OUT−ON is present. It is internally clamped to GND1 and has an equivalent pull−down resistor of 125 kW to ensure that output is low in the absence of an input signal.
Part No. NCD57080A
Datasheet NCD57080A Download
Manufacturer
onsemi
Description Isolated High Current IGBT Gate Driver
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NCD57080A datasheet page 1 preview

FEATURES

● High Peak Output Current (+6.5 A/−6.5 A)
● Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A)
● Short Propagation Delays with Accurate Matching
● IGBT/MOSFET Gate Clamping during Short Circuit
● IGBT/MOSFET Gate Active Pull Down
● Tight UVLO Thresholds for Bias Flexibility
● Wide Bias Voltage Range including Negative VEE2 (Version B)
● 3.3 V, 5 V, and 15 V Logic Input
● 3.75 kVRMS VISO (I−O) (to meet UL1577 Requirements)
● Safety and Regulatory Approvals: ♦ UL1577 Certified, 3750 VACRMS for 1 Minute ♦ DIN VDE V 0884−11 Certification Pending, 870 VPK Working Insulation Voltage
● High Transient Immunity
● High Electromagnetic Immunity
● NCV Prefix for Automotive and Other

APPLICATIONS

Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical

APPLICATIONS

● Motor Control
● Uninterruptible Power Supplies...
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