onsemi NCD57090E
The under voltage lockout (UVLO) circuit enables the device to operate at power on when a typical supply voltage higher than VUVLO1−OUT−ON is present. It is internally clamped to GND1 and has an equivalent pull−down resistor of 125 kW to ensure that output is low in the absence of an input signal.| Part No. | NCD57090E |
|---|---|
| Datasheet | NCD57090E Download |
| Manufacturer |  onsemi |
| Description | IGBT/MOSFET Gate Driver |
| Buy | Stock & Price |
FEATURES
● High Peak Output Current (+6.5 A/−6.5 A)● Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A/D/F)
● Short Propagation Delays with Accurate Matching
● IGBT/MOSFET Gate Clamping during Short Circuit
● IGBT/MOSFET Gate Active Pull Down
● Tight UVLO Thresholds for Bias Flexibility
● Wide Bias Voltage Range including Negative VEE2 (Version B)
● 3.3 V, 5 V, and 15 V Logic Input
● 5 kVrms Galvanic Isolation
● High Transient Immunity
● High Electromagnetic Immunity
● NCV Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical
APPLICATIONS
● Motor Control● Uninterruptible Power Supplies (UPS)
● Automotive
APPLICATIONS
● Industrial Power Supplies● Solar Inverters DATA SHEET SOIC8 WB CASE 751EW MARKING DIAGRAM 8 5709zy AWLYYWW G 1 5709zy A WL YY WW G = Specific De...
