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NGTB15N120FL2WG Datasheet PDF

onsemi NGTB15N120FL2WG

IGBT

Part No. NGTB15N120FL2WG
Datasheet NGTB15N120FL2WG Download
Manufacturer
onsemi
Description IGBT
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NGTB15N120FL2WG datasheet page 1 preview

FEATURES

● Extremely Efficient Trench with Field Stop Technology
● TJmax = 175°C
● Soft Fast Reverse Recovery Diode
● Optimized for High Speed Switching
● 10 ms Short Circuit Capability
● These are Pb−Free Devices Typical

APPLICATIONS

● Solar Inverter
● Uninterruptible Power Inverter Supplies (UPS)
● Welding

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit Collector−emitter Voltage VCES 1200 V Collector Current @ TC = 25°C @ TC = 100°C IC A 30 15 Pulsed Collector Current, Tpulse Limited by TJmax ICM 60 A Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 30 15 Diode Pulsed Current, Tpulse Limited IFM by TJmax 60 A Gate−emitter Voltage Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10) VGE ±20 V ±30 Power Dissipation @ TC = 25°C @ TC = 100°C PD W 294 147 Short Circuit Withstand Time TSC VGE = 15 V, VCE = 500 V, TJ ≤ 150°C 10 ms Operating Junction Temperature Range TJ −55 to +175 °C Storage Temperature Range Lead temperature for soldering, 1/8″ from case for 5 seconds Tstg TSLD −55 to +175 °C 260 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.
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