onsemi NGTB15N120IHRWG
IGBT
| Part No. | NGTB15N120IHRWG |
|---|---|
| Datasheet | NGTB15N120IHRWG Download |
| Manufacturer |  onsemi |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● Extremely Efficient Trench with Fieldstop Technology● Low Switching Loss Reduces System Power Dissipation
● Optimized for Low Case Temperature in IH Cooker Application
● Reliable and Cost Effective Single Die Solution
● These are Pb−Free Devices Typical
APPLICATIONS
● Inductive Heating● Consumer Appliances
● Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C Diode pulsed current, Tpulse limited by TJmax Gate−emitter voltage Transient Gate−emitter voltage (Tpulse = 5 ms, D < 0.10) Power Dissipation @ TC = 25°C @ TC = 100°C Operating junction temperature range Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Symbol VCES IC ICM IF IFM VGE Value 1200 30 15 60 30 15 60 $20 $25 PD TJ Tstg TSLD 333 166 −40 to +175 −55 to +175 260 Unit V A A A A V W °C °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.
