onsemi NGTB15N120IHWG
IGBT
| Part No. | NGTB15N120IHWG |
|---|---|
| Datasheet | NGTB15N120IHWG Download |
| Manufacturer |  onsemi |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● Extremely Efficient Trench with Fieldstop Technology● Low Switching Loss Reduces System Power Dissipation
● Optimized for Low Losses in IH Cooker Application
● This is a Pb−Free Device Typical
APPLICATIONS
● Inductive Heating● Consumer Appliances
● Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 1200 V IC A 30 15 Pulsed collector current, Tpulse limited ICM by TJmax, 10 ms Pulse, VGE = 15 V 60 A Diode forward current @ TC = 25°C @ TC = 100°C IF A 30 15 Diode pulsed current, Tpulse limited IFM by TJmax 60 A Gate−emitter voltage Transient Gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE $20 V $25 Power Dissipation @ TC = 25°C @ TC = 100°C PD W 278 139 Operating junction temperature range Storage temperature range Lead temperature for soldering, 1/8″ from case for 5 seconds TJ Tstg TSLD −40 to +175 °C −55 to +175 °C 260 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.
