onsemi NGTB25N120FL2WG
IGBT
| Part No. | NGTB25N120FL2WG |
|---|---|
| Datasheet | NGTB25N120FL2WG Download |
| Manufacturer |  onsemi |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● Extremely Efficient Trench with Field Stop Technology● TJmax = 175°C
● Soft Fast Reverse Recovery Diode
● Optimized for High Speed Switching
● 10 ms Short Circuit Capability
● These are Pb−Free Devices Typical
APPLICATIONS
● Solar Inverter● Uninterruptible Power Inverter Supplies (UPS)
● Welding
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit Collector−emitter Voltage VCES 1200 V Collector Current @ TC = 25°C @ TC = 100°C IC A 50 25 Pulsed Collector Current, Tpulse Limited by TJmax ICM 100 A Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 50 25 Diode Pulsed Current, Tpulse Limited IFM by TJmax 100 A Gate−emitter Voltage Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10) VGE ±20 V ±30 Power Dissipation @ TC = 25°C @ TC = 100°C PD W 385 192 Short Circuit Withstand Time TSC VGE = 15 V, VCE = 500 V, TJ ≤ 150°C 10 ms Operating Junction Temperature Range TJ −55 to +175 °C Storage Temperature Range Lead temperature for soldering, 1/8″ from case for 5 seconds Tstg TSLD −55 to +175 °C 260 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.
