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NGTB30N120FL2WG Datasheet PDF

onsemi NGTB30N120FL2WG

IGBT

Part No. NGTB30N120FL2WG
Datasheet NGTB30N120FL2WG Download
Manufacturer
onsemi
Description IGBT
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NGTB30N120FL2WG datasheet page 1 preview

FEATURES

● Extremely Efficient Trench with Field Stop Technology
● TJmax = 175°C
● Soft Fast Reverse Recovery Diode
● Optimized for High Speed Switching
● 10 ms Short Circuit Capability
● This is a Pb−Free Device Typical

APPLICATIONS

● Solar Inverter
● Uninterruptible Power Supplies (UPS)
● Welding

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 1200 V IC A 60 30 Pulsed collector current, Tpulse limited by TJmax, 10 ms Pulse, VGE = 15 V Diode forward current @ TC = 25°C @ TC = 100°C ICM 120 A IF A 60 30 Diode pulsed current, Tpulse limited IFM by TJmax Gate−emitter voltage VGE Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) 120 A $20 V ±30 Power Dissipation @ TC = 25°C @ TC = 100°C PD W 452 227 Short Circuit Withstand Time TSC VGE = 15 V, VCE = 500 V, TJ ≤ 150°C Operating junction temperature TJ range 10 ms −55 to +175 °C Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Tstg TSLD −55 to +175 °C 260 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.
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