onsemi NGTB30N65IHL2WG
IGBT
| Part No. | NGTB30N65IHL2WG |
|---|---|
| Datasheet | NGTB30N65IHL2WG Download |
| Manufacturer |  onsemi |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● Extremely Efficient Trench with Fieldstop Technology● Low Switching Loss Reduces System Power Dissipation
● Optimized for Low Losses in IH Cooker Application
● TJmax = 175°C
● Soft, Fast Free Wheeling Diode
● This is a Pb−Free Device Typical
APPLICATIONS
● Inductive Heating● Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 650 V IC A 60 30 Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C ICM 120 A IF A 60 30 Diode pulsed current, Tpulse limited by TJmax Gate−emitter voltage Power Dissipation @ TC = 25°C @ TC = 100°C Operating junction temperature range IFM 120 A VGE $20 V PD W 300 150 TJ −55 to +175 °C Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Tstg TSLD −55 to +175 °C 260 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
