onsemi NGTB35N65FL2WG
IGBT
FEATURES
● Extremely Efficient Trench with Field Stop Technology● TJmax = 175°C
● Soft Fast Reverse Recovery Diode
● Optimized for High Speed Switching
● 5 ms Short−Circuit Capability
● These are Pb−Free Devices Typical
APPLICATIONS
● Solar Inverters● Uninterruptible Power Supplies (UPS)
● Welding
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit Collector−emitter Voltage Collector Current @ TC = 25°C @ TC = 100°C Diode Forward Current @ TC = 25°C @ TC = 100°C Diode Pulsed Current TPULSE Limited by TJ Max Pulsed Collector Current, Tpulse Limited by TJmax Short−circuit Withstand Time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C Gate−emitter Voltage Transient Gate−emitter Voltage (TPULSE = 5 ms, D < 0.10) Power Dissipation @ TC = 25°C @ TC = 100°C Operating Junction Temperature Range VCES IC IF IFM ICM tSC 650 V A 70 35 A 70 35 120 A 120 A 5 ms VGE $20 V $30 V PD W 300 150 TJ −55 to +175 °C Storage Temperature Range Lead temperature for soldering, 1/8″ from case for 5 seconds Tstg TSLD −55 to +175 °C 260 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.