onsemi NGTB40N120S3WG
IGBT
| Part No. | NGTB40N120S3WG |
|---|---|
| Datasheet | NGTB40N120S3WG Download |
| Manufacturer |  onsemi |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● Extremely Efficient Trench with Field Stop Technology● TJmax = 175°C
● Low VF Reverse Diode
● Optimized for High Speed Switching
● These are Pb−Free Devices Typical
APPLICATIONS
● Welding● Uninterruptible Power Inverter Supplies (UPS)
● Motor Control
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 1200 V IC A 160 40 Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C ICM 160 A IF A 160 40 Diode pulsed current, Tpulse limited IFM by TJmax Gate−emitter voltage VGE Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) 160 A ±20 V ±30 Power Dissipation @ TC = 25°C @ TC = 100°C Operating junction temperature range Storage temperature range Lead temperature for soldering, 1/8″ from case for 10 seconds PD TJ Tstg TSLD W 454 227 −55 to +175 °C −55 to +175 °C 260 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
