onsemi NID9N05BCL
N-Channel Power MOSFET
| Part No. | NID9N05BCL |
|---|---|
| Datasheet | NID9N05BCL Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Diode Clamp Between Gate and Source● ESD Protection − HBM 5000 V
● Active Over−Voltage Gate to Drain Clamp
● Scalable to Lower or Higher RDS(on)
● Internal Series Gate Resistance
● AEC−Q101 Qualified and PPAP Capable
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor DriversMAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C Drain Current − Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 125°C (VDD = 50 V, ID(pk) = 1.5 A, VGS = 10 V, RG = 25 W) Thermal Resistance, Junction−to−Case Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for...
