NTBG028N170M1 Datasheet PDF

FEATURES

● Typ. RDS(on) = 28 mW
● Ultra Low Gate Charge (typ. QG(tot) = 222 nC)
● Low Effective Output Capacitance (typ. Coss = 200 pF)
● 100% Avalanche Tested
● RoHS Compliant Typical

APPLICATIONS

● UPS
● DC−DC Converter
● Boost Converter

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Recommended Operation Values of Gate−to−Source Voltage TC < 175°C VDSS 1700 V VGS −15/+25 V VGSop −5/+20 V Continuous Drain Current (Note 2) Steady TC = 25°C ID State 71 A Power Dissipation (Note 2) PD 428 W Continuous Drain Current (Note 2) Steady TC = 100°C ID State 53 A Power Dissipation (Note 2) PD 214 W Pulsed Drain Current (Note 3) TA = 25°C IDM 195 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 30 A, L = 1 mH) (Note 4) Maximum Lead Temperature for Soldering (1/8″ from case for 5 s) IS 99 A EAS 450 mJ TL 300 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.