onsemi NTLUS4C12N
N-Channel MOSFET
FEATURES
● Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving with Exposed Drain Pads for Excellent Thermal Conduction● Ultra Low RDS(on) to Reduce Conduction Losses
● Optimized Gate Charge to Reduce Switching Losses
● Low Capacitance to Minimize Driver Losses
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● Power Load Switch● Synch DC−DC Converters
● Wireless Charging Circuit V(BR)DSS 30 V MOSFET RDS(on) MAX 9 mW @ 10 V 12 mW @ 4.5 V 15 mW @ 3.7 V 19 mW @ 3.3 V ID MAX 10.7 A D G
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS ±20 V Continuous Drain Steady TA = 25°C ID Current (Note 1) State TA = 85°C 10.7 A 7.7 t ≤ 5 s TA = 25°C 15.1 Power Dissipa- Steady TA = 25°C PD tion (Note 1) State 1.54 W t ≤ 5 s TA = 25°C 3.1 Continuous Drain Steady TA = 25°C ID Current (Note 2) State TA = 85°C 6.8 A 4.9 Power Dissipation (Note 2) TA = 25°C PD 0.63 W Pu...