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NTMFS0D5N03C Datasheet PDF

onsemi NTMFS0D5N03C

N-Channel MOSFET

Part No. NTMFS0D5N03C
Datasheet NTMFS0D5N03C Download
Manufacturer
onsemi
Description N-Channel MOSFET
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NTMFS0D5N03C datasheet page 1 preview

FEATURES

● Advanced Package (5x6mm) with Excellent Thermal Conduction
● Ultra Low RDS(on) to Improve System Efficiency
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

APPLICATIONS

● ORing
● Motor Drive
● Power Load Switch
● DC−DC Converters
● Battery Management and Protection

MAXIMUM RATINGS

(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 25°C ID Current RqJC (Note 2) Steady TC =100°C State Power Dissipation TC = 25°C PD RqJC (Note 2) 464 A 328 200 W Continuous Drain TA = 25°C ID Current RqJA (Notes 1, 2) Steady TA = 100°C State Power Dissipation TA = 25°C PD RqJA (Notes 1, 2) 65 A 46 3.9 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Source Current (Body Diode) IS 166 A Single Pulse Drain−to−Source Avalanche Energy (IL = 96 Apk) EAS 467 mJ Operating Junction and Storage Temperature TJ, TSTG −55 to °C Range +175 Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.
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