onsemi NTMFS0D5N03C
N-Channel MOSFET
FEATURES
● Advanced Package (5x6mm) with Excellent Thermal Conduction● Ultra Low RDS(on) to Improve System Efficiency
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● ORing● Motor Drive
● Power Load Switch
● DC−DC Converters
● Battery Management and Protection
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 25°C ID Current RqJC (Note 2) Steady TC =100°C State Power Dissipation TC = 25°C PD RqJC (Note 2) 464 A 328 200 W Continuous Drain TA = 25°C ID Current RqJA (Notes 1, 2) Steady TA = 100°C State Power Dissipation TA = 25°C PD RqJA (Notes 1, 2) 65 A 46 3.9 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Source Current (Body Diode) IS 166 A Single Pulse Drain−to−Source Avalanche Energy (IL = 96 Apk) EAS 467 mJ Operating Junction and Storage Temperature TJ, TSTG −55 to °C Range +175 Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.