NTNS3164NZ Datasheet PDF

FEATURES

● Single N-Channel MOSFET
● Ultra Low Profile SOT-883 (XDFN3) 1.0 x 0.6 x 0.4 mm for Extremely Thin Environments Such as Portable Electronics
● Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm Package
● 1.5 V Gate Drive
● These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

APPLICATIONS

● High Side Switch
● High Speed Interfacing
● Level Shift and Translate
● Optimized for Power Management in Ultra Portable Solutions

MAXIMUM RATINGS

(TJ = 25 °C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) t≤5s Steady State TA = 25 °C TA = 85 °C TA = 25 °C TA = 25 °C VDSS VGS ID PD 20 V ±8 V 361 mA 260 427 155 mW t≤5s 217 Pulsed Drain Current tp = 10 ms IDM 1082 mA Operating Junction and Storage Temperature TJ, TSTG −55 to °C 150 Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IS 129 mA TL 260 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.