NTTFS004N04C Datasheet PDF

FEATURES

● Small Footprint (3.3 x 3.3 mm) for Compact Design
● Low RDS(on) to Minimize Conduction Losses
● Low Capacitance to Minimize Driver Losses
● These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 2, 3, 4) TC = 25°C ID Steady TC = 100°C Power Dissipation State TC = 25°C PD RqJC (Notes 1, 2, 3) TC = 100°C 77 A 43 55 W 18 Continuous Drain Current RqJA (Notes 1, 3, 4) Power Dissipation RqJA (Notes 1, 3) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 18 A 13 3.2 W 1.6 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 338 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 5.2 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 45.5 A EAS 122 mJ TL 260 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.