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NVB110N65S3F Datasheet PDF

onsemi NVB110N65S3F

This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Part No. NVB110N65S3F
Datasheet NVB110N65S3F Download
Manufacturer
onsemi
Description N-Channel MOSFET
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NVB110N65S3F datasheet page 1 preview

DESCRIPTION

SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

FEATURES

● 700 V @ TJ = 150°C
● Typ. RDS(on) = 93 mW
● Ultra Low Gate Charge (Typ. Qg = 58 nC)
● Low Effective Output Capacitance (Typ. Coss(eff.) = 533 pF)
● 100% Avalanche Tested
● Qualified with AEC−Q101
● These Devices are Pb−Free and are RoHS Compliant Typical

APPLICATIONS

● Automotive On Board Charger
● Automotive DC/DC Converter for HEV V(BR)DSS 650 V RDS(ON) MAX 110 mW @ 10 V ID MAX 30 A D G S N−CHANNEL MOSFET D G S D2PAK−3 TO−263 CASE 418AJ MARKING DIAGRAM &Z&3&K NVB 110N65S3F © Semiconductor Components Industries, LLC, 2018 June, 2019 − Rev.
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