onsemi NVH4L027N65S3F
N-Channel MOSFET
| Part No. | NVH4L027N65S3F |
|---|---|
| Datasheet | NVH4L027N65S3F Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Ultra Low Gate Charge & Low Effective Output Capacitance● Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS)
● AEC−Q101 Qualified and PPAP Capable
● These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS Gate−to−Source Voltage − DC VGSS Gate−to−Source Voltage − AC (f > 1 Hz) VGSS Drain Current − Continuous (TC = 25°C) ID Drain Current − Continuous (TC = 100°C) ID Drain Current − Pulsed (Note 3) IDM Power Dissipation (TC = 25°C) PD Power Dissipation − Derate Above 25°C PD Operating Junction and Storage Temperature Range TJ, TSTG 650 ±30 ±30 75 60 187.5 595 4.76 −55 to +150 V V V A A A W W/°C °C Single Pulsed Avalanche Energy (Note 4) Repetitive Avalanche Energy (Note 3) MOSFET dv/dt EAS EAR dv/dt 1610 5.95 100 mJ mJ V/ns Peak Diode Recovery dv/dt (Note 5) dv/dt 50 V/ns Max. Lead Temperature for Soldering Purposes TL (1/8″ from case for 5 s) 300 °C THERMAL CHARACTERISTI...
