onsemi NVTFS5824NL
Power MOSFET
| Part No. | NVTFS5824NL |
|---|---|
| Datasheet | NVTFS5824NL Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Small Footprint (3.3 x 3.3 mm) for Compact Design● Low RDS(on) to Minimize Conduction Losses
● Low Capacitance to Minimize Driver Losses
● NVTFS5824NLWF − Wettable Flanks Product
● AEC−Q101 Qualified and PPAP Capable
● These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Cur- Tmb = 25°C ID rent RYJ−mb (Notes 1, 2, 3, 4) Steady Tmb = 100°C Power Dissipation State Tmb = 25°C PD RYJ−mb (Notes 1, 2, 3) Tmb = 100°C 37 A 26 57 W 28 Continuous Drain Cur- TA = 25°C ID rent RqJA (Notes 1 & 3, 4) Steady TA = 100°C Power Dissipation RqJA (Notes 1, 3) State TA = 25°C PD TA = 100°C 7.6 A 5.4 3.2 W 1.6 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 127 A Operating Junction and Storage Temperature TJ, Tstg −55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, IL(...
