NVTFS5C453NL Datasheet PDF

FEATURES

● Small Footprint (3.3 x 3.3 mm) for Compact Design
● Low RDS(on) to Minimize Conduction Losses
● Low Capacitance to Minimize Driver Losses
● NVTFS5C453NLWF − Wettable Flanks Product
● AEC−Q101 Qualified and PPAP Capable
● These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 107 A 75 68 W 34 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 23 A 16 3.3 W 1.6 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 740 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 7 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 76 A EAS 215 mJ TL 260 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.