onsemi NXH80B120H2Q0
The NXH80B120H2Q0 is a high−density, integrated power module combines high−performance IGBTs with rugged anti−parallel diodes including on−board thermistor.FEATURES
● Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module● 1200 V FSII IGBT VCE(SAT) = 2.2 V
● 1200 V SiC Diode VF = 1.4 V
● Low Inductive Layout
● Solderable Pins
● Thermistor
● Bare Copper and Nickel−Plated DBC Options Typical
APPLICATIONS
● Solar Inverter● Uninterruptible Power Supplies
● Energy Storage Systems 7, 8 D5 Bypass Diode 5,6,15,16 D3 Boost Diode D6 Bypass Diode D4 Boost Diode 13,14 9,10 11,12 T1 Boost IGBT 1 1 D1 IGBT Protection Diode D2 IGBT Protection Diode T2 Boost IGBT 2 20 DATA SHEET Q0BOOST CASE 180AJ MARKING DIAGRAM NXH80B120H2Q0Sxx ATYYWW NXH80B120H2Q0Sxx = Device Code AT = Assembly & Test Site Code YYWW = Year and Work Week Code PIN CONNECTIONS ORDERING INFORMATION See detailed ordering, marking and shipping information on page 4 of this data sheet. 2 19 21 22 3,4 17,18 NTC Thermistor Figure 1. NXH80B120H2Q0SG Schematic Diagram © Semiconductor Components Industries, LLC, 2016 1 March, 2023 − Rev. 4 Publication Order Number: NXH80B120H2Q0/D NXH80B120H2Q0 Table 1.