onsemi PCFF55H120SWF
Power DIODE
| Part No. | PCFF55H120SWF |
|---|---|
| Datasheet | PCFF55H120SWF Download |
| Manufacturer |  onsemi |
| Description | Power DIODE |
| Buy | Stock & Price |
FEATURES
● Advanced Gen VII Technology● Fast and Soft Recovery
● Maximum Junction Temperature 175°C
● Low Forward Voltage: VF = 1.78 V (Typ.) @ IF = 55 A
● Easy to Parallel Operation Typical
APPLICATIONS
● Solar● Energy storage
● Industrial motor control MECHANICAL PARAMETERS Parameter Die Size (w/ Scribe Lane) Anode Pad Size Scribe Lane Width Die Thickness Top Metal Back Metal Topside Passivation Value Unit 3,400 x 6,400 mm2 2,437 x 5,437 mm2 80 mm 119 mm 6 mm AlSiCu 1.65 mm Ti/NiV/Ag Silicon Nitride plus Polyimide Wafer Diameter 200 mm Max Possible Die Per Wafer 1145 Recommended Storage Environment In original container, in dry nitrogen, < 6 months at an ambient temperature of 23°C DIE DATA SHEET VR = 1200 V IF = 55 A DIODE DIE A C DIE OUTLINE ORDERING INFORMATION Device PCFF55H120SWF Inking Yes Shipping Sawn Wafer on Tape © Semiconductor Components Industries, LLC, 2022 1 December 2022 − Rev. P0 Publication Order Number: PCFF55H120SWF−DIE/D PCFF55H120SWF
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