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RFPA0875 Datasheet Preview

RFPA0875 Datasheet

Integrated Power Amplifier Module

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RFMD + TriQuint = Qorvo
RFPA0875
Integrated Power Amplifier Module
869MHz to 894MHz
The RFPA0875 is a two-stage power amplifier (PA) designed for
Small Cell Base Stations. Its broadband quadrature design
supports usage in multiple bands with excellent output return loss
and load tolerance. When used with DPD, the RFPA0875 delivers
up to 28dBm LTE Downlink (CFR 8dB) with ACLR -50dBc
VCC1 GND NC GND
16 15 14 13
GND 1
12 VCC2
RFPA0875
Package: Module, 16-pin,
5.0mm x 5.0mm x 1.175mm
Features
POUT = 28dBm, 26% PAE, with 5V,
20MHz LTE DL, CFR 8dB
ACLR -50dBc with DPD
29dB Gain
Integrated Matching to 50
Integrated DC Block Capacitors
Broadband Quadrature Design
Excellent Output Return Loss
Covers 3GPP Downlink in Band 5
VSWR Tolerant, Load Insensitive
RFIN 2
Split
IMN
Combine
OMN
11 NC
GND 3
10 GND
GND 4
Bias
Circuitry
9 RFOUT
5
VBIAS
6
VEN
7
GND
8
GND
Functional Block Diagram
Applications
Small Cell Base Stations
Data Cards with Terminals
Customer Premise Equipment
Ordering Information
RFPA0875SQ
Sample bag with 25 pieces
RFPA0875SR
7" Reel with 100 pieces
RFPA0875TR13
13" Reel with 2500 pieces
RFPA0875PCK-410 869MHz to 894MHz PCBA with 5-piece sample
bag
Revision DS20151003
© 2015 RF Micro Devices, Inc.
- 1 of 10 -
Disclaimer: Subject to change without notice
www.rfmd.com / www.qorvo.com




qorvo

RFPA0875 Datasheet Preview

RFPA0875 Datasheet

Integrated Power Amplifier Module

No Preview Available !

RFPA0875
RFMD + TriQuint = Qorvo
Absolute Maximum Ratings
Parameter
DC Supply Voltage, VCC (POUT <28dBm, VSWR < 6:1)
Enable Control Logic, VEN
Maximum Average RF Input Power into 50Load (VCC = 5.25V)
Modulated (LTE-20MHz) Input Power 6:1 Output VSWR (VCC = 5.25V)
Operating Case Temperature
Storage Temperature Range
Moisture Sensitivity Level (260° JEDEC J-STD-020)
ESD Rating, All Pins, HBM, JEDEC JS-001
ESD Rating, All Pins, CDM, JEDEC JS-002
Rating
6
+3.3
30
-4
-40 to +85
-40 to +150
MSL 3
1000
1000
Unit
V
V
dBm
dBm
°C
°C
V
V
Recommended Operating Condition
Parameter
Operating Temperature Range
Operating Junction Temperature
Power Supply VCC1, VCC2, VBIAS
Specification
Min Typ Max
-40 +85
180
4.75 5
5.25
Unit
°C
°C
V
Caution! ESD sensitive device.
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of antimony
trioxide in polymeric materials and red
phosphorus as a flame retardant, and
<2% antimony in solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Nominal Operating Parameters
Parameter
Specification
Min Typ Max
General Performance
Operating Frequency Range
869
894
VEN Range (Logic Low)
VEN Range (Logic High)
VEN Enable Current
Total Idle Current (ICQ)
VBIAS Current
DC Enable Time
0 0.4
1.4 3.0
0.2
110
3
7
RF Rise / Fall Time
Thermal Resistance (RTH)
2
31
Unit Condition
MHz
V
V
mA
mA
mA
µs
µs
°C/W
VEN = 1.8V
DC only, VCC1 = VCC2 = VBIAS = 5V, VEN = 1.8V
DC only, VEN = 1.8V
DC only, time from VEN = high to stable idle current (90% of steady state
value)
POUT 28dBm, 90% of target, DC settled prior to RF
Junction-to-backside of IC
Revision DS20151003
© 2015 RF Micro Devices, Inc.
- 2 of 10 -
Disclaimer: Subject to change without notice
www.rfmd.com / www.qorvo.com


Part Number RFPA0875
Description Integrated Power Amplifier Module
Maker qorvo
Total Page 10 Pages
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