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UF3C065080B7S Datasheet - qorvo

SiC FET

UF3C065080B7S Features

* w On-resistance RDS(on): 85mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 69nC w Low body diode VFSD: 1.54V w Low gate charge: QG = 23nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Package creepage and clearance distance > 6.1mm w Kelvin source

UF3C065080B7S General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UF3C065080B7S Datasheet (724.76 KB)

Preview of UF3C065080B7S PDF

Datasheet Details

Part number:

UF3C065080B7S

Manufacturer:

qorvo

File Size:

724.76 KB

Description:

Sic fet.

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UF3C065080B7S SiC FET qorvo

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