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SVF1N60B - N-CHANNEL MOSFET

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Part number SVF1N60B
Manufacturer sapcon
File Size 2.14 MB
Description N-CHANNEL MOSFET
Datasheet download datasheet SVF1N60B Datasheet

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sapcon® ●Absoolute Maximum Rantings (Tc=25℃) PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDSS 600 V Drain Current-continuous ID 0.5 A Drain Current-pulse Gate-Source Voltage IDM VGSS 2.0 ±30 A V Power Dissipation Junction Temperature Storage Temperature PD Tj TsTg 3.0 150 -55~+150 W ℃ ℃ SVF1N60B N-CHANNEL MOSFET ● Electronic Characteristics(Tc=25℃) CHARACTERISTICS SYMBOL TEST CONDITION MIN Typ MAX UNIT Drain-Source Voltage BVDSS ID=250uA;VGS=0V 600 - -V Zero Gate Voltage Drain Current VDS=600V,VGS=0V IDSS (TC=25℃） - - 10 uA Gate-body leakage current.forward IGSSF VDS=0V,VGS=30V - - 100 nA Gate-body leakage current.
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