p-channel enhancement mode power mosfet.
* VDS = -12V,ID = -3A RDS(ON) < 85 m Ω @ VGS=-2.5V RDS(ON) < 65 m Ω @ VGS=-4.5V
FD3401
D G
S Schematic diagram
* High Power and current handing capability
*.
GENERAL FEATURES
* VDS = -12V,ID = -3A RDS(ON) < 85 m Ω @ VGS=-2.5V RDS(ON) < 65 m Ω @ VGS=-4.5V
FD3401
D G
S Sche.
The FD3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* VDS = -12V,ID = .
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