Datasheet4U Logo Datasheet4U.com

PE2312 - Dual P & N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PE2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V.
  • N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.5V.

📥 Download Datasheet

Datasheet preview – PE2312

Datasheet Details

Part number PE2312
Manufacturer semi one
File Size 1.90 MB
Description Dual P & N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE2312 Datasheet
Additional preview pages of the PE2312 datasheet.

📁 Similar Datasheet

  • PE2319 - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PE2301A - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PE2302A - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PE2306A - Enhancement Mode Power MOSFET (ChipSourceTek)
  • PE2333A - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PE200GB - THYRISTOR MODULE (SanRex Corporation)
  • PE2010 - CURRENT SENSOR (YAGEO)
  • PE2012 - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PE2012T - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PE2023 - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
Other Datasheets by semi one
  • PE2317 - P-Channel Enhancement Mode Power MOSFET
  • PE2300 - N-Channel Enhancement Mode Power MOSFET
  • PE2301 - P-Channel Enhancement Mode Power MOSFET
  • PE2301A - P-Channel Enhancement Mode Power MOSFET
  • PE2302 - N-Channel Enhancement Mode Power MOSFET
  • PE2302A - N-Channel Enhancement Mode Power MOSFET
  • PE2304A - N-Channel Enhancement Mode Power MOSFET
  • PE2305 - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
PE2312 Dual Enhancement Mode Power MOSFET (N- and P- Channel) DESCRIPTION The PE2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. (6)D1 (1)G1 (3)G2 (4)D2 GENERAL FEATURES ● P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V ● N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.
Published: |