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PE3401F Datasheet Preview

PE3401F Datasheet

P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE3401F uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
VDS = -16V,ID = -3A
RDS(ON) < 85 m @ VGS=-2.5V
RDS(ON) < 65 m @ VGS=-4.5V
PE3401F
D
G
S
Schematic diagram
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Marking and pin Assignment
Application
PWM applications
Load switch
Power management
SOT-23 top view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current -Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
-16
±8
-3
-10
1
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-16V,VGS=0V
125 /W
Min Typ Max Unit
-16 - V
- - -1 μA
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semi one

PE3401F Datasheet Preview

PE3401F Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
VGS=±8V, VDS=0V
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-2.5A
VGS=-2.5V, ID=-2A
VDS=-5V,ID=-2.8A
VDS=-10V,VGS=0V,
F=1.0MHz
VDD=-10V,ID=-1A
VGS=-4.5V,RGEN=10
VDS=-10V,ID=-3A,
VGS=-2.5V
VGS=0V,IS=1.3A
PE3401F
- - ±100 nA
-0.45 -0.7
- 45
- 65
- 9.5
-1
65
80
-
V
m
m
S
- 405
- 75
- 55
-
-
-
PF
PF
PF
- 11
-
- 35
-
- 30
-
- 10
-
- 3.3 12
- 0.7
-
- 1.3
-
nS
nS
nS
nS
nC
nC
nC
- - -1.2 V
- - -1.3 A
www.semi-one.com
Page 2
V1


Part Number PE3401F
Description P-Channel Enhancement Mode Power MOSFET
Maker semi one
Total Page 6 Pages
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