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PE55P15K Datasheet Preview

PE55P15K Datasheet

P-Channel Enhancement Mode Power MOSFET

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PE55P15K
P-Channel Enhancement Mode Power MOSFET
Description
The PE55P15K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =-55V,ID =-15A
RDS(ON) <80m@ VGS=-10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and high frequency circuits
DC-DC Converter
Schematic diagram
Marking and pin assignment
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
PE55P15K
PE55P15K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance ,Junction-to-Case(Note 2)
RθJC
Limit
-55
±20
-15
-10
-50
50
-55 To 150
2.5
Unit
V
V
A
A
A
W
/W
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PE55P15K Datasheet Preview

PE55P15K Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS VDS=-55V,VGS=0V
IGSS VGS=±20V,VDS=0V
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-5A
Forward Transconductance
gFS VDS=-15V,ID=-5A
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=-20V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=-30V, ,RL=30
VGS=-10V,RGEN=6
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=-30V,ID=-5A,
VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD VGS=0V,IS=-3A
Diode Forward Current (Note 2)
IS
PE55P15K
Min Typ Max Unit
-55 -
--
--
-
1
±100
V
μA
nA
-1.5 -2.6
- 60
16 -
-3.5
80
-
V
m
S
- 1450
- 145
- 110
-
-
-
PF
PF
PF
-8
-9
- 65
- 30
- 26
- 4.5
-7
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
-5
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
WWW.SEMI-ONE.COM
Page 2
v1.0


Part Number PE55P15K
Description P-Channel Enhancement Mode Power MOSFET
Maker semi one
Total Page 6 Pages
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