PED2310F
PED2310F is N-Channel Enhancement Mode Power MOSFET manufactured by semi one.
N-Channel Enhancement Mode Power MOSFET
Description
The PED2310F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
- VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- Battery protection
- Load switch
- Power management
D1 G1
G2
D2
S1 S2
Schematic diagram
G2 S2 S2
G1 S1 S1
DFN2x3-6L bottom...
