SG01L-C18
Features
Properties of the SG01L- C18 UV photodiode
- UVC-only sensitivity, pliant with DVGW W294, PTB reported high chip stability
- Active Area A = 1,0 mm2
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10µW/cm2 peak radiation results a current of approx. 12 n A
About the material Silicon Carbide (Si C) Si C provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make Si C the best available material for visible blind semiconductor UV detectors. The Si C detectors can be permanently operated at up to 170°C (338°F). The temperature coefficient of signal (responsivity) is also low, < 0,1%/K. Because of the low noise (dark current in the f A range), very low UV radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see typical circuit on page 3).
Options Si C photodiodes are available with seven different active chip...
