WSA753
PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE AMPLIFIER
◇ Low Speed Switching ◇ plement to WSC752
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current(DC) Collector Current(Pulse)- Base Current Collector Power Dissipation(Tc=25℃) Collector Power Dissipation(Ta=25℃) Junction Temperature Storage Temperature
- PW≤ 10ms,Duty Cycle≤ 50%
(Ta=25℃)
L0sdn
Unit V V V A A A W W ℃ ℃
1. Base 2. Collector 3. Emitter
Symbol VCBO VCEO VEBO IC Ic IB PC PC Tj Tstg
Value -40 -30 -5 -2 -7 -0.6 15 1.2 150 -55~ +150
3 1 2
ELECTRICAL CHARACTERISTICS
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current
- DC Current Gain
- Collector-Emitter Saturation Voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO #h FE
(Ta=25℃, unless otherwise specified)
Test Condition Ic=-100㎂ ,IE=0 Ic=-10m A, IB=0 Ic=-1m A ,IC=0 VCB=-40V ,IE=0...
