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WSA753 Datasheet Preview

WSA753 Datasheet

PNP EPITAXIAL SILICON TRANSISTOR

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GENERAL PURPOSE AMPLIFIER
Low Speed Switching
Complement to WSC752
WSA753
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25)
Characteristic
Symbol Value Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base voltage
VEBO
-5
V
Collector Current(DC)
IC -2 A
Collector Current(Pulse)*
Ic -7 A
Base Current
Collector Power Dissipation(Tc=25)
Collector Power Dissipation(Ta=25)
Junction Temperature
IB
PC
PC
Tj
Storage Temperature
Tstg
-0.6
15
1.2
150
-55~
+150
A
W
W
*PW10ms,Duty Cycle50%
L0sdn
3
12
1. Base
2. Collector
3. Emitter
ELECTRICAL CHARACTERISTICS
(Ta=25, unless otherwise specified)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
#hFE
Test Condition
Ic=-100,IE=0
Ic=-10mA, IB=0
Ic=-1mA ,IC=0
VCB=-40V ,IE=0
VEB=-5V ,IC=0
VCE=-2V, IC=-500mA
*Collector-Emitter Saturation
Voltage
VCE(sat)(1) IC=-2.0A, IB=-200
VCE(sat)(2) IC=-1.5A, IB=-30
Current Gain Bandwith Product
Output Capacitance
fT VCE=-5V,IC=-500mA
Cob Vf=C1BM=H-1Z0V ,IE=0
* Pulse test:PW350us,Duty cycle2%
# hFE Classification:
Classification
O
hFE 100~200
Y
160~320
G
200~400
Min TYP MAX Unit
-40 V
-30 V
-5 V
-0.1
-0.1
100 400
-0.5 -0.8
-2
V
120 MHZ
13 pF
JAN. 2003 REV:00
copyright@wooseok s.tech corp. All rights reserved.
1
www.DataSheet.in




wooseok

WSA753 Datasheet Preview

WSA753 Datasheet

PNP EPITAXIAL SILICON TRANSISTOR

No Preview Available !

Static Characteristics
2.2
2.0
IB=-10mA
1.6
IB=-8mA
1.2
IB=-6mA
0.8 IB=-4mA
IB=-3mA
0.4 IB=-2mA
0 IB=-1mA
-4 -8 -12
-16
Vce,Collector-Emitter Voltage ,V
Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
IC=10IB
-1000
VBE(sat)
-100
VCE(sat)
-10
1000
300
100
30
10
WSA753
DC Current Gain
VCE=-2V
-1 -10 -100
-1000
-10000
IC,Collector Current,mA
Current Gain-Bandwidth Product
1000
300
- 100
50
VCE=-5V
30
10
-1 -10 -100 -1000
IC,Collector Current,mA
Power Derating
16
14
12
8
4
1
-0.01
-0.1 -1
IC,Collector Current,A
-10 Safe Operating Area
Ic Max(Pulse)
1mS 100uS
-3 10mS
Ic Max(DC)
-1
-0.3
-0.1
50 100
150 200
Tc(), Case Temperature
250
-0.01
-1
-3
-10 -30
-100 -300 -1000
VCE(V),Collector Emitter Voltage
JAN. 2003 REV:00
copyright@wooseok s.tech corp. All rights reserved.
2
www.DataSheet.in


Part Number WSA753
Description PNP EPITAXIAL SILICON TRANSISTOR
Maker wooseok
Total Page 2 Pages
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