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Unisonic Technologies
Unisonic Technologies

1N4004G Datasheet

GLASS PASSIVATED SILICON RECTIFIER


1N4004G Datasheet Preview


UNISONIC TECHNOLOGIES CO., LTD
1N4004G
GLASS PASSIVATED SILICON
RECTIFIER
„ DESCRIPTION
The UTC 1N4004G is a glass passivated silicon rectifier, it uses
UTC’s advanced technology to provide customers with high forward
surge current and low reverse leakage, etc.
„ FEATURES
* Low reverse leakage
* High forward surge current capability
„ SYMBOL
2
DIODE
1
DO-41
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N4004GL-Z41-B
1N4004GP-Z41-B
1N4004GL-Z41-R
1N4004GP-Z41-R
Note: Pin Assignment: A: Anode K: Cathode
1N4004GL-Z41-B
(1)Packing Type
(2)Package Type
(3)Lead Free
Package
DO-41
DO-41
Pin Assignment
12
KA
KA
(1) B: Tape Box, R: Tape Reel
(2) Z41: DO-41
(3) L: Lead Free, P: Halogen Free
Packing
Tape Box
Tape Reel
„ MARKING
4004G
Cathode Band for uni-directional Only
L: Lead Free
P: Halogen Free
Date Code
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R601-253.B
Page 1

1N4004G
DIODE
„ ABSOLUTE MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
Working Peak Reverse Voltage
Repetitive Peak Reverse Voltage
VRWM
VRRM
400
400
V
V
Maximum RMS Reverse Voltage
DC Blocking Voltage
VRMS
VR
280
400
V
V
Average Rectified Output Current (TA=75°C)
IO
1.0 A
Peak Forward Surge Current 8.3ms Single Half
Sine-Wave Superimposed on Rated Load
IFSM
30
A
Junction Temperature
Storage Temperature
TJ
TSTG
-55~+150
-55~+150
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction to Ambient (Note 2)
SYMBOL
θJA
RATINGS
50
UNIT
°C/W
„ ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.
PARAMETER
SYMBOL TEST CONDITIONS MIN TYP
Instantaneous Forward Voltage
VFM IF=1.0A
DC Reverse Current at Rated DC Blocking
Voltage
IRM
TA=25°C
TA=100°C
Junction Capacitance (Note 1)
CJ
Notes: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
15
2. Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted.
MAX
1.1
5.0
50
UNIT
V
μA
μA
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R601-253.B
Page 2

1N4004G
„ TYPICAL CHARACTERISTICS
Forward Current Derating Curve
1.0
0.8
0.6
0.4
Single Phase Half Wave 60Hz
Resistive or inductive Load
0
0 25 50 75 100 125
150
175
Ambient Temperature, TA (°C)
Typical Instantaneous Forward
Characteristics
20
10
1
0.1
0.01
0.6
0.8
TJ=25°C
Pulse Width=300s
1% Duty Cycle
1.0 1.2 1.4 1.5
Instantaneous Forward Voltage, VFM (V)
Typical Junction Capacitance
200
100 TJ=25°C
10
DIODE
Maximum Non-repetitive Peak Forward
Surge Current
30
25
20
15
10
8.3ms Single Half Sine-Wave
(JEDEC Method)
5.0
1 10
Number of Cycles at 60Hz
100
1,000
Typical Reverse Characteristics
100 TJ=150°C
10
1 TJ=100°C
0.1
0.010
TJ=25°C
20 40 60 80 100
Percent of Peak Reverse Voltage (%)
Typical Transient Thermal Impedance
100
10
1
1
0.1 1.0 10
Reverse voltage (V)
100
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0.1
0.01
0.1 1
10
t, Pulse Duration (sec.)
100
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QW-R601-253.B
Page 3
Part Number 1N4004G
Manufactur Unisonic Technologies
Description GLASS PASSIVATED SILICON RECTIFIER
Total Page 4 Pages
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